High performance photonic devices for switching applications in silicon photonics

El silicio es la plataforma más prometedora para la integración fotónica, asegurando la compatibilidad con los procesos de fabricación CMOS y la producción en masa de dispositivos a bajo coste. Durante las últimas décadas, la tecnología fotónica basada en la plataforma de silicio ha mostrado un gran crecimiento, desarrollando diferentes tipos de dispositivos ópticos de alto rendimiento. Una de las posibilidades para continuar mejorando las prestaciones de los dispositivos fotónicos es mediante la combinación con otras tecnologías como la plasmónica o con nuevos materiales con propiedades excepcionales y compatibilidad CMOS. Las tecnologías híbridas pueden superar las limitaciones de la tecnología de silicio, dando lugar a nuevos dispositivos capaces de superar las prestaciones de sus homólogos electrónicos. La tecnología híbrida dióxido de vanadio/ silicio permite el desarrollo de dispositivos de altas prestaciones, con gran ancho de banda, mayor velocidad de operación y mayor eficiencia energética con dimensiones de la escala de la longitud de onda. El objetivo principal de esta tesis ha sido la propuesta y desarrollo de dispositivos fotónicos de altas prestaciones para aplicaciones de conmutación. En este contexto, diferentes estructuras basadas en silicio, tecnología plasmónica y las propiedades sintonizables del dióxido de vanadio han sido investigadas para controlar la polarización de la luz y para desarrollar otras funcionalidades electro-ópticas como la modulación.Silicon is the most promising platform for photonic integration, ensuring CMOS fabrication compatibility and mass production of cost-effective devices. During the last decades, photonic technology based on the Silicon on Insulator (SOI) platform has shown a great evolution, developing different sorts of high performance optical devices. One way to continue improving the performance of photonic optical devices is the combination of the silicon platform with another technologies like plasmonics or CMOS compatible materials with unique properties. Hybrid technologies can overcome the current limits of the silicon technology and develop new devices exceeding the performance metrics of its counterparts electronic devices. The vanadium dioxide/silicon hybrid technology allows the development of new high-performance devices with broadband performance, faster operating speed and energy efficient optical response with wavelength-scale device dimensions. The main goal of this thesis has been the proposal and development of high performance photonic devices for switching applications. In this context, different structures, based on silicon, plasmonics and the tunable properties of vanadium dioxide, have been investigated to control the polarization of light and for enabling other electro-optical functionalities, like optical modulation.El silici és la plataforma més prometedora per a la integració fotònica, assegurant la compatibilitat amb els processos de fabricació CMOS i la producció en massa de dispositius a baix cost. Durant les últimes dècades, la tecnologia fotònica basada en la plataforma de silici ha mostrat un gran creixement, desenvolupant diferents tipus de dispositius òptics d'alt rendiment. Una de les possibilitats per a continuar millorant el rendiment dels dispositius fotònics és per mitjà de la combinació amb altres tecnologies com la plasmònica o amb nous materials amb propietats excepcionals i compatibilitat CMOS. Les tecnologies híbrides poden superar les limitacions de la tecnologia de silici, donant lloc a nous dispositius capaços de superar el rendiment dels seus homòlegs electrònics. La tecnologia híbrida diòxid de vanadi/silici permet el desenvolupament de dispositius d'alt rendiment, amb gran ample de banda, major velocitat d'operació i major eficiència energètica en l'escala de la longitud d'ona. L'objectiu principal d'esta tesi ha sigut la proposta i desenvolupament de dispositius fotònics d'alt rendiment per a aplicacions de commutació. En este context, diferents estructures basades en silici, tecnologia plasmònica i les propietats sintonitzables del diòxid de vanadi han sigut investigades per a controlar la polarització de la llum i per a desenvolupar altres funcionalitats electró-òptiques com la modulació.Sánchez Diana, LD. (2016). High performance photonic devices for switching applications in silicon photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/77150TESI

Broadband 8 micrometers long hybrid silicon-plasmonic transverse magnetic-transverse electric converter with losses below 2 dB

This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.38.002842. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under lawA novel ultracompact (8 mu m length) hybrid silicon-plasmonic TM-TE converter is reported. The conversion is achieved during a partial power coupling between a waveguide and a hybrid plasmonic parallel waveguide. The impact of different types of metals is also analyzed. At a wavelength of 1.55 mu m, the device has an extinction ratio (ER) of 27.6 dB and insertion loss (IL) of 1.75 dB. Furthermore, an optical bandwidth as large as 100 nm is achieved with ERs higher than 25 dB and ILs below 2 dB. (C) 2013 Optical Society of AmericaThe authors acknowledge funding from TEC2012-38540 LEOMIS and PROMETEO-2010-087. L. Sanchez also acknowledges the Generalitat Valenciana for funding his grant in the context of the VALi+d program.Sánchez Diana, LD.; Sanchis Kilders, P. (2013). Broadband 8 micrometers long hybrid silicon-plasmonic transverse magnetic-transverse electric converter with losses below 2 dB. Optics Letters. 38(15):2842-2845. https://doi.org/10.1364/OL.38.002842S284228453815Jalali, B., & Fathpour, S. (2006). Silicon Photonics. Journal of Lightwave Technology, 24(12), 4600-4615. doi:10.1109/jlt.2006.885782Dionne, J. A., Sweatlock, L. A., Sheldon, M. T., Alivisatos, A. P., & Atwater, H. A. (2010). Silicon-Based Plasmonics for On-Chip Photonics. IEEE Journal of Selected Topics in Quantum Electronics, 16(1), 295-306. doi:10.1109/jstqe.2009.2034983Zhu, S., Lo, G.-Q., & Kwong, D.-L. (2012). Experimental Demonstration of Vertical ${\rm Cu}\hbox{-}{\rm SiO}_{2}\hbox{-}{\rm Si}$ Hybrid Plasmonic Waveguide Components on an SOI Platform. IEEE Photonics Technology Letters, 24(14), 1224-1226. doi:10.1109/lpt.2012.2199979Tobing, L. Y. M., Tjahjana, L., & Hua Zhang, D. (2012). Demonstration of low-loss on-chip integrated plasmonic waveguide based on simple fabrication steps on silicon-on-insulator platform. Applied Physics Letters, 101(4), 041117. doi:10.1063/1.4739523Fedyanin, D. Y., Krasavin, A. V., Arsenin, A. V., & Zayats, A. V. (2012). Surface Plasmon Polariton Amplification upon Electrical Injection in Highly Integrated Plasmonic Circuits. Nano Letters, 12(5), 2459-2463. doi:10.1021/nl300540xAlonso-Ramos, C., Halir, R., Ortega-Moñux, A., Cheben, P., Vivien, L., Molina-Fernández, Í., … Schmid, J. (2012). Highly tolerant tunable waveguide polarization rotator scheme. Optics Letters, 37(17), 3534. doi:10.1364/ol.37.003534Zhang, H., Das, S., Zhang, J., Huang, Y., Li, C., Chen, S., … Thong, J. T. L. (2012). Efficient and broadband polarization rotator using horizontal slot waveguide for silicon photonics. Applied Physics Letters, 101(2), 021105. doi:10.1063/1.4734640Aamer, M., Gutierrez, A. M., Brimont, A., Vermeulen, D., Roelkens, G., Fedeli, J.-M., … Sanchis, P. (2012). CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters, 24(22), 2031-2034. doi:10.1109/lpt.2012.2218593Nakayama, K., Shoji, Y., & Mizumoto, T. (2012). Single Trench SiON Waveguide TE-TM Mode Converter. IEEE Photonics Technology Letters, 24(15), 1310-1312. doi:10.1109/lpt.2012.2202646Komatsu, M., Saitoh, K., & Koshiba, M. (2012). Compact Polarization Rotator Based on Surface Plasmon Polariton With Low Insertion Loss. IEEE Photonics Journal, 4(3), 707-714. doi:10.1109/jphot.2012.2195650Caspers, J. N., Alam, M. Z., & Mojahedi, M. (2012). Compact hybrid plasmonic polarization rotator. Optics Letters, 37(22), 4615. doi:10.1364/ol.37.004615Roberts, S. (1960). Optical Properties of Copper. Physical Review, 118(6), 1509-1518. doi:10.1103/physrev.118.1509Sun, X., Alam, M. Z., Wagner, S. J., Aitchison, J. S., & Mojahedi, M. (2012). Experimental demonstration of a hybrid plasmonic transverse electric pass polarizer for a silicon-on-insulator platform. Optics Letters, 37(23), 4814. doi:10.1364/ol.37.00481

Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon

"This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.40.001452. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law"[EN] Vanadium dioxide (VO2) is a metal-insulator transition (MIT) oxide recently used in plasmonics, metamaterials, and reconfigurable photonics. Because of the MIT, VO2 shows great change in its refractive index allowing for ultra-compact devices with low power consumption. We theoretically demonstrate a transverse electric (TE) and a transverse magnetic (TM) pass polarizer with an ultra-compact length of only 1 μm and tunable using the MIT of the VO2. During the insulating phase, both devices exhibit insertion losses below 2 dB at 1550 nm. Changing to the metallic phase, the unwanted polarization is attenuated above 15 dB while insertion losses are kept below 3 dB. Broadband operation over a range of 60 nm is also achieved.This work was supported by the European Commission under project FP7-ICT-2013-11-619456 SITOGA. Financial support from TEC2012-38540 LEOMIS is also acknowledged. L. Sanchez also acknowledges the Generalitat Valenciana for funding his grant in the context of the VALi+d program.Sánchez Diana, LD.; Lechago Buendía, S.; Sanchis Kilders, P. (2015). Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon. Optics Letters. 40(7):1452-1455. https://doi.org/10.1364/OL.40.001452S14521455407Soref, R., & Larenzo, J. (1986). All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm. IEEE Journal of Quantum Electronics, 22(6), 873-879. doi:10.1109/jqe.1986.1073057Jalali, B., & Fathpour, S. (2006). Silicon Photonics. Journal of Lightwave Technology, 24(12), 4600-4615. doi:10.1109/jlt.2006.885782Manolatou, C., Johnson, S. G., Fan, S., Villeneuve, P. R., Haus, H. A., & Joannopoulos, J. D. (1999). High-density integrated optics. Journal of Lightwave Technology, 17(9), 1682-1692. doi:10.1109/50.788575Alonso-Ramos, C., Halir, R., Ortega-Moñux, A., Cheben, P., Vivien, L., Molina-Fernández, Í., … Schmid, J. (2012). Highly tolerant tunable waveguide polarization rotator scheme. Optics Letters, 37(17), 3534. doi:10.1364/ol.37.003534Zhang, H., Das, S., Zhang, J., Huang, Y., Li, C., Chen, S., … Thong, J. T. L. (2012). Efficient and broadband polarization rotator using horizontal slot waveguide for silicon photonics. Applied Physics Letters, 101(2), 021105. doi:10.1063/1.4734640Aamer, M., Gutierrez, A. M., Brimont, A., Vermeulen, D., Roelkens, G., Fedeli, J.-M., … Sanchis, P. (2012). CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters, 24(22), 2031-2034. doi:10.1109/lpt.2012.2218593Komatsu, M., Saitoh, K., & Koshiba, M. (2012). Compact Polarization Rotator Based on Surface Plasmon Polariton With Low Insertion Loss. IEEE Photonics Journal, 4(3), 707-714. doi:10.1109/jphot.2012.2195650Caspers, J. N., Alam, M. Z., & Mojahedi, M. (2012). Compact hybrid plasmonic polarization rotator. Optics Letters, 37(22), 4615. doi:10.1364/ol.37.004615Chen, G., Chen, L., Ding, W., Sun, F., & Feng, R. (2013). Ultrashort slot polarization rotator with double paralleled nonlinear geometry slot crossings. Optics Letters, 38(11), 1984. doi:10.1364/ol.38.001984Nakayama, K., Shoji, Y., & Mizumoto, T. (2012). Single Trench SiON Waveguide TE-TM Mode Converter. IEEE Photonics Technology Letters, 24(15), 1310-1312. doi:10.1109/lpt.2012.2202646Sánchez, L., & Sanchis, P. (2013). Broadband 8 μm long hybrid silicon-plasmonic transverse magnetic–transverse electric converter with losses below 2 dB. Optics Letters, 38(15), 2842. doi:10.1364/ol.38.002842Zhang, H., Huang, Y., Das, S., Li, C., Yu, M., Lo, P. G.-Q., … Thong, J. (2013). Polarization splitter using horizontal slot waveguide. Optics Express, 21(3), 3363. doi:10.1364/oe.21.003363Ding, Y., Liu, L., Peucheret, C., & Ou, H. (2012). Fabrication tolerant polarization splitter and rotator based on a tapered directional coupler. Optics Express, 20(18), 20021. doi:10.1364/oe.20.020021Ding, Y., Ou, H., & Peucheret, C. (2013). Wideband polarization splitter and rotator with large fabrication tolerance and simple fabrication process. Optics Letters, 38(8), 1227. doi:10.1364/ol.38.001227Dai, D., & Bowers, J. E. (2011). Novel concept for ultracompact polarization splitter-rotator based on silicon nanowires. Optics Express, 19(11), 10940. doi:10.1364/oe.19.010940Xiao, Z., Luo, X., Lim, P. H., Prabhathan, P., Silalahi, S. T. H., Liow, T.-Y., … Luan, F. (2013). Ultra-compact low loss polarization insensitive silicon waveguide splitter. Optics Express, 21(14), 16331. doi:10.1364/oe.21.016331Chee, J., Zhu, S., & Lo, G. Q. (2012). CMOS compatible polarization splitter using hybrid plasmonic waveguide. Optics Express, 20(23), 25345. doi:10.1364/oe.20.025345Huang, Y., Zhu, S., Zhang, H., Liow, T.-Y., & Lo, G.-Q. (2013). CMOS compatible horizontal nanoplasmonic slot waveguides TE-pass polarizer on silicon-on-insulator platform. Optics Express, 21(10), 12790. doi:10.1364/oe.21.012790Sun, X., Alam, M. Z., Wagner, S. J., Aitchison, J. S., & Mojahedi, M. (2012). Experimental demonstration of a hybrid plasmonic transverse electric pass polarizer for a silicon-on-insulator platform. Optics Letters, 37(23), 4814. doi:10.1364/ol.37.004814Alam, M., Aitchsion, J. S., & Mojahedi, M. (2011). Compact hybrid TM-pass polarizer for silicon-on-insulator platform. Applied Optics, 50(15), 2294. doi:10.1364/ao.50.002294Alam, M. Z., Aitchison, J. S., & Mojahedi, M. (2011). Compact and silicon-on-insulator-compatible hybrid plasmonic TE-pass polarizer. Optics Letters, 37(1), 55. doi:10.1364/ol.37.000055Zhoufeng Ying, Guanghui Wang, Xuping Zhang, Ying Huang, Ho-Pui Ho, & Yixin Zhang. (2015). Ultracompact TE-Pass Polarizer Based on a Hybrid Plasmonic Waveguide. IEEE Photonics Technology Letters, 27(2), 201-204. doi:10.1109/lpt.2014.2365029Avrutsky, I. (2008). Integrated Optical Polarizer for Silicon-on-Insulator Waveguides Using Evanescent Wave Coupling to Gap Plasmon–Polaritons. IEEE Journal of Selected Topics in Quantum Electronics, 14(6), 1509-1514. doi:10.1109/jstqe.2008.926284Dai, D., Wang, Z., Julian, N., & Bowers, J. E. (2010). Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides. Optics Express, 18(26), 27404. doi:10.1364/oe.18.027404Ryckman, J. D., Diez-Blanco, V., Nag, J., Marvel, R. E., Choi, B. K., Haglund, R. F., & Weiss, S. M. (2012). Photothermal optical modulation of ultra-compact hybrid Si-VO_2 ring resonators. Optics Express, 20(12), 13215. doi:10.1364/oe.20.013215Ruzmetov, D., Gopalakrishnan, G., Ko, C., Narayanamurti, V., & Ramanathan, S. (2010). Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer. Journal of Applied Physics, 107(11), 114516. doi:10.1063/1.3408899Briggs, R. M., Pryce, I. M., & Atwater, H. A. (2010). Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition. Optics Express, 18(11), 11192. doi:10.1364/oe.18.011192Kruger, B. A., Joushaghani, A., & Poon, J. K. S. (2012). Design of electrically driven hybrid vanadium dioxide (VO_2) plasmonic switches. Optics Express, 20(21), 23598. doi:10.1364/oe.20.023598Ooi, K. J. A., Bai, P., Chu, H. S., & Ang, L. K. (2013). Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator. Nanophotonics, 2(1). doi:10.1515/nanoph-2012-0028Chen, S., Yi, X., Ma, H., Wang, H., Tao, X., Chen, M., & Ke, C. (2003). A novel structural VO2micro-optical switch. Optical and Quantum Electronics, 35(15), 1351-1355. doi:10.1023/b:oqel.0000009429.14136.3dJoushaghani, A., Kruger, B. A., Paradis, S., Alain, D., Stewart Aitchison, J., & Poon, J. K. S. (2013). Sub-volt broadband hybrid plasmonic-vanadium dioxide switches. Applied Physics Letters, 102(6), 061101. doi:10.1063/1.4790834Ryckman, J. D., Hallman, K. A., Marvel, R. E., Haglund, R. F., & Weiss, S. M. (2013). Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition. Optics Express, 21(9), 10753. doi:10.1364/oe.21.010753Sweatlock, L. A., & Diest, K. (2012). Vanadium dioxide based plasmonic modulators. Optics Express, 20(8), 8700. doi:10.1364/oe.20.008700Kim, J. T. (2014). CMOS-compatible hybrid plasmonic modulator based on vanadium dioxide insulator-metal phase transition. Optics Letters, 39(13), 3997. doi:10.1364/ol.39.00399

Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology

[EN] A tunable transverse electric (TE) pass polarizer is demonstrated based on hybrid vanadium dioxide/silicon (VO2/Si) technology. The 20-mu m-long TE pass polarizer exploits the phase transition of the active VO2 material to control the rejection of the unwanted transverse magnetic (TM) polarization. The device features insertion losses below 1 dB at static conditions and insertion losses of 5.5 dB and an attenuation of TM polarization of 19 dB in the active state for a wavelength range between 1540 nm and 1570 nm. To the best of our knowledge, this is the first time that tunable polarizers compatible with Si photonics are demonstrated. (C) 2018 Optical Society of AmericaMinisterio de Economia y Competitividad (MINECO) (TEC2016-76849); European Commission (EC) [PHRESCO (688579), SITOGA (619456)]; Universitat Politecnica de Valencia; Comision Nacional de Investigacion Cientifica y Tecnologica (CONICYT).Sánchez Diana, LD.; Olivares-Sánchez-Mellado, I.; Parra Gómez, J.; Menghini, M.; Homm, P.; Locquet, J.; Sanchis Kilders, P. (2018). Experimental demonstration of a tunable transverse electric pass polarizer based on hybrid VO2/silicon technology. Optics Letters. 43(15):3650-3653. https://doi.org/10.1364/OL.43.003650S365036534315Liu, L., Ding, Y., Yvind, K., & Hvam, J. M. (2011). Efficient and compact TE–TM polarization converter built on silicon-on-insulator platform with a simple fabrication process. Optics Letters, 36(7), 1059. doi:10.1364/ol.36.001059Alonso-Ramos, C., Halir, R., Ortega-Moñux, A., Cheben, P., Vivien, L., Molina-Fernández, Í., … Schmid, J. (2012). Highly tolerant tunable waveguide polarization rotator scheme. Optics Letters, 37(17), 3534. doi:10.1364/ol.37.003534Zhang, H., Das, S., Zhang, J., Huang, Y., Li, C., Chen, S., … Thong, J. T. L. (2012). Efficient and broadband polarization rotator using horizontal slot waveguide for silicon photonics. Applied Physics Letters, 101(2), 021105. doi:10.1063/1.4734640Azzam, S. I. H., Hameed, M. F. O., Areed, N. F. F., Abd-Elrazzak, M. M., El-Mikaty, H. A., & Obayya, S. S. A. (2014). Proposal of an Ultracompact CMOS-Compatible TE-/TM-Pass Polarizer Based on SoI Platform. IEEE Photonics Technology Letters, 26(16), 1633-1636. doi:10.1109/lpt.2014.2329416Dai, D., Wang, Z., Julian, N., & Bowers, J. E. (2010). Compact broadband polarizer based on shallowly-etched silicon-on-insulator ridge optical waveguides. Optics Express, 18(26), 27404. doi:10.1364/oe.18.027404Aamer, M., Gutierrez, A. M., Brimont, A., Vermeulen, D., Roelkens, G., Fedeli, J.-M., … Sanchis, P. (2012). CMOS Compatible Silicon-on-Insulator Polarization Rotator Based on Symmetry Breaking of the Waveguide Cross Section. IEEE Photonics Technology Letters, 24(22), 2031-2034. doi:10.1109/lpt.2012.2218593Xiong, Y., Xu, D.-X., Schmid, J. H., Cheben, P., & Ye, W. N. (2015). High Extinction Ratio and Broadband Silicon TE-Pass Polarizer Using Subwavelength Grating Index Engineering. IEEE Photonics Journal, 7(5), 1-7. doi:10.1109/jphot.2015.2483204Sánchez, L., & Sanchis, P. (2013). Broadband 8 μm long hybrid silicon-plasmonic transverse magnetic–transverse electric converter with losses below 2 dB. Optics Letters, 38(15), 2842. doi:10.1364/ol.38.002842Komatsu, M., Saitoh, K., & Koshiba, M. (2012). Compact Polarization Rotator Based on Surface Plasmon Polariton With Low Insertion Loss. IEEE Photonics Journal, 4(3), 707-714. doi:10.1109/jphot.2012.2195650Caspers, J. N., Alam, M. Z., & Mojahedi, M. (2012). Compact hybrid plasmonic polarization rotator. Optics Letters, 37(22), 4615. doi:10.1364/ol.37.004615Sun, X., Alam, M. Z., Wagner, S. J., Aitchison, J. S., & Mojahedi, M. (2012). Experimental demonstration of a hybrid plasmonic transverse electric pass polarizer for a silicon-on-insulator platform. Optics Letters, 37(23), 4814. doi:10.1364/ol.37.004814Alam, M. Z., Aitchison, J. S., & Mojahedi, M. (2011). Compact and silicon-on-insulator-compatible hybrid plasmonic TE-pass polarizer. Optics Letters, 37(1), 55. doi:10.1364/ol.37.000055Jin, L., Chen, Q., & Wen, L. (2014). Mode-coupling polarization rotator based on plasmonic waveguide. Optics Letters, 39(9), 2798. doi:10.1364/ol.39.002798Caspers, J. N., Aitchison, J. S., & Mojahedi, M. (2013). Experimental demonstration of an integrated hybrid plasmonic polarization rotator. Optics Letters, 38(20), 4054. doi:10.1364/ol.38.004054Briggs, R. M., Pryce, I. M., & Atwater, H. A. (2010). Compact silicon photonic waveguide modulator based on the vanadium dioxide metal-insulator phase transition. Optics Express, 18(11), 11192. doi:10.1364/oe.18.011192Ryckman, J. D., Hallman, K. A., Marvel, R. E., Haglund, R. F., & Weiss, S. M. (2013). Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition. Optics Express, 21(9), 10753. doi:10.1364/oe.21.010753Markov, P., Marvel, R. E., Conley, H. J., Miller, K. J., Haglund, R. F., & Weiss, S. M. (2015). Optically Monitored Electrical Switching in VO2. ACS Photonics, 2(8), 1175-1182. doi:10.1021/acsphotonics.5b00244Joushaghani, A., Jeong, J., Paradis, S., Alain, D., Stewart Aitchison, J., & Poon, J. K. S. (2015). Wavelength-size hybrid Si-VO_2 waveguide electroabsorption optical switches and photodetectors. Optics Express, 23(3), 3657. doi:10.1364/oe.23.003657Sánchez, L., Lechago, S., & Sanchis, P. (2015). Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon. Optics Letters, 40(7), 1452. doi:10.1364/ol.40.001452Sanchez, L., Lechago, S., Gutierrez, A., & Sanchis, P. (2016). Analysis and Design Optimization of a Hybrid VO2/Silicon2 $\times$ 2 Microring Switch. IEEE Photonics Journal, 8(2), 1-9. doi:10.1109/jphot.2016.2551463Miller, K. J., Hallman, K. A., Haglund, R. F., & Weiss, S. M. (2017). Silicon waveguide optical switch with embedded phase change material. Optics Express, 25(22), 26527. doi:10.1364/oe.25.026527Clark, J. K., Ho, Y.-L., Matsui, H., & Delaunay, J.-J. (2018). Optically Pumped Hybrid Plasmonic-Photonic Waveguide Modulator Using the VO2 Metal-Insulator Phase Transition. IEEE Photonics Journal, 10(1), 1-9. doi:10.1109/jphot.2017.2784429Ko, C., & Ramanathan, S. (2008). Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry. Applied Physics Letters, 93(25), 252101. doi:10.1063/1.3050464Zimmers, A., Aigouy, L., Mortier, M., Sharoni, A., Wang, S., West, K. G., … Schuller, I. K. (2013). Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition inVO2. Physical Review Letters, 110(5). doi:10.1103/physrevlett.110.056601Kats, M. A., Blanchard, R., Genevet, P., Yang, Z., Qazilbash, M. M., Basov, D. N., … Capasso, F. (2013). Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material. Optics Letters, 38(3), 368. doi:10.1364/ol.38.000368Chae, B.-G., Kim, H.-T., Youn, D.-H., & Kang, K.-Y. (2005). Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse. Physica B: Condensed Matter, 369(1-4), 76-80. doi:10.1016/j.physb.2005.07.032Ruzmetov, D., Gopalakrishnan, G., Deng, J., Narayanamurti, V., & Ramanathan, S. (2009). Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions. Journal of Applied Physics, 106(8), 083702. doi:10.1063/1.3245338Lee, S. B., Kim, K., Oh, J. S., Kahng, B., & Lee, J. S. (2013). Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films. Applied Physics Letters, 102(6), 063501. doi:10.1063/1.4790842Joushaghani, A., Jeong, J., Paradis, S., Alain, D., Stewart Aitchison, J., & Poon, J. K. S. (2014). Voltage-controlled switching and thermal effects in VO2 nano-gap junctions. Applied Physics Letters, 104(22), 221904. doi:10.1063/1.4881155Yang, Z., Hart, S., Ko, C., Yacoby, A., & Ramanathan, S. (2011). Studies on electric triggering of the metal-insulator transition in VO2thin films between 77 K and 300 K. Journal of Applied Physics, 110(3), 033725. doi:10.1063/1.3619806Yoon, J., Lee, G., Park, C., Mun, B. S., & Ju, H. (2014). Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices. Applied Physics Letters, 105(8), 083503. doi:10.1063/1.4893783Sánchez, L., Rosa, A., Griol, A., Gutierrez, A., Homm, P., Van Bilzen, B., … Sanchis, P. (2017). Impact of the external resistance on the switching power consumption in VO2 nano gap junctions. Applied Physics Letters, 111(3), 031904. doi:10.1063/1.4994326Ryckman, J. D., Diez-Blanco, V., Nag, J., Marvel, R. E., Choi, B. K., Haglund, R. F., & Weiss, S. M. (2012). Photothermal optical modulation of ultra-compact hybrid Si-VO_2 ring resonators. Optics Express, 20(12), 13215. doi:10.1364/oe.20.013215Abreu, E., Gilbert Corder, S. N., Yun, S. J., Wang, S., Ramírez, J. G., West, K., … Averitt, R. D. (2017). Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films. Physical Review B, 96(9). doi:10.1103/physrevb.96.094309Van Bilzen, B., Homm, P., Dillemans, L., Su, C.-Y., Menghini, M., Sousa, M., … Locquet, J.-P. (2015). Production of VO2 thin films through post-deposition annealing of V2O3 and VOx films. Thin Solid Films, 591, 143-148. doi:10.1016/j.tsf.2015.08.036Olivares, I., Sánchez, L., Parra, J., Larrea, R., Griol, A., Menghini, M., … Sanchis, P. (2018). Optical switching in hybrid VO2/Si waveguides thermally triggered by lateral microheaters. Optics Express, 26(10), 12387. doi:10.1364/oe.26.012387Rosa, Á., Gutiérrez, A., Brimont, A., Griol, A., & Sanchis, P. (2016). High performace silicon 2x2 optical switch based on a thermo-optically tunable multimode interference coupler and efficient electrodes. Optics Express, 24(1), 191. doi:10.1364/oe.24.000191Shibuya, K., Kawasaki, M., & Tokura, Y. (2010). Metal-insulator transition in epitaxial V1−xWxO2(0≤x≤0.33) thin films. Applied Physics Letters, 96(2), 022102. doi:10.1063/1.3291053Ahuja, R., Granqvist, C. G., Hermansson, K., Niklasson, G. A., & Scheicher, R. H. (2012). Optical properties of Mg-doped VO2: Absorption measurements and hybrid functional calculations. Applied Physics Letters, 101(20), 201902. doi:10.1063/1.4766167Miyazaki, K., Shibuya, K., Suzuki, M., Wado, H., & Sawa, A. (2014). Correlation between thermal hysteresis width and broadening of metal–insulator transition in Cr- and Nb-doped VO2films. Japanese Journal of Applied Physics, 53(7), 071102. doi:10.7567/jjap.53.071102Niklasson, G. A., Granqvist, C. G., & Hunderi, O. (1981). Effective medium models for the optical properties of inhomogeneous materials. Applied Optics, 20(1), 26. doi:10.1364/ao.20.000026Jepsen, P. U., Fischer, B. M., Thoman, A., Helm, H., Suh, J. Y., Lopez, R., & Haglund, R. F. (2006). Metal-insulator phase transition in aVO2thin film observed with terahertz spectroscopy. Physical Review B, 74(20). doi:10.1103/physrevb.74.205103Fang, X., & Yang, L. (2017). Thermal effect analysis of silicon microring optical switch for on-chip interconnect. Journal of Semiconductors, 38(10), 104004. doi:10.1088/1674-4926/38/10/10400

Analysis and design optimization of a hybrid VO2/Silicon 2x2 microring switch

The metal-to-insulator transition (MIT) property of vanadium dioxide (VO2) has been recently used in several application fields like plasmonics, sensing, metamaterials and optical modulation. Due to the MIT nature, VO2 allows a huge change in its complex refractive index that can be electro-optically controlled. In this work, the analysis and design optimization of a 2x2 microring switch based on a hybrid VO2/silicon waveguide structure is addressed. Switching is achieved by exploiting the change in both absorption loss and phase shift that occurs in the VO2 when changing from the insulating to the metallic state. The device is optimized to minimize insertion losses and crosstalk. An active length of only 2.8µm is required to achieve a data throughput rate higher than 500Gbps at a single optical wavelength.This work was also supported by LEOMIS (TEC2012-38540) and NANOMET PLUS-Conselleria d'Educacio, Cultura i Esport (PROMETEOII/2014/034). The work of L. Sanchez was supported by the Generalitat Valenciana in the context of the VALi+d program.Sánchez Diana, LD.; Lechago-Buendia, S.; Gutiérrez Campo, AM.; Sanchis Kilders, P. (2016). Analysis and design optimization of a hybrid VO2/Silicon 2x2 microring switch. IEEE Photonics Journal. 8(2):1-9. https://doi.org/10.1109/JPHOT.2016.2551463S198

On-chip wireless silicon photonics: From reconfigurable interconnects to lab-on-chip devices

[EN] Photonic integrated circuits are developing as key enabling components for high-performance computing and advanced network-on-chip, as well as other emerging technologies such as lab-on-chip sensors, with relevant applications in areas from medicine and biotechnology to aerospace. These demanding applications will require novel features, such as dynamically reconfigurable light pathways, obtained by properly harnessing on-chip optical radiation. In this paper, we introduce a broadband, high-directivity (>150), low-loss, and reconfigurable silicon photonics nanoantenna that fully enables on-chip radiation control. We propose the use of these nanoantennas as versatile building blocks to develop wireless (unguided) silicon photonic devices, which considerably enhance the range of achievable integrated photonic functionalities. As examples of applications, we demonstrate 160 Gbit·s-1 data transmission over mm-scale wireless interconnects, a compact low-crosstalk 12-port crossing, and electrically reconfigurable pathways via optical beam steering. Moreover, the realization of a flow micro-cytometer for particle characterization demonstrates the smart system integration potential of our approach as lab-on-chip devices.Funding from grant TEC2015-63838-C3-1-R OPTONANOSENS (MINECO/FEDER, UE) is acknowledged. This work was also supported by project TEC2015-73581-JIN (AEI/FEDER, UE), the EU-funded projects FP7-ICT PHOXTROT (No.318240) and H2020-, the EU-funded H2020-FET-HPC EXANEST (No.671553) and the Generalitat Valenciana's PROMETEO grant NANOMET PLUS (PROMETEO II/2014/34) CG-M acknowledges support from Generalitat Valenciana’s VALi+d postdoctoral program (exp. APOSTD/ 2014/044). We thank David Zurita for his help in the design of the data acquisition code for the sensing application.García Meca, C.; Lechago-Buendia, S.; Brimont, ACJ.; Griol Barres, A.; Mas Gómez, SM.; Sánchez Diana, LD.; Bellieres, LC.... (2017). On-chip wireless silicon photonics: From reconfigurable interconnects to lab-on-chip devices. Light: Science & Applications. 6:e17053-e17053. https://doi.org/10.1038/lsa.2017.53e17053e170536Kirchain R, Kimerling R . A roadmap for nanophotonics. Nat Photonics 2007; 1: 303–305.Fan XD, White IM . Optofluidic microsystems for chemical and biological analysis. Nat Photonics 2011; 5: 591–597.Zhuang LM, Roeloffzen CGH, Meijerink A, Burla M, Marpaung DAI et al. Novel ring resonator-based integrated photonic beamformer for broadband phased array receive antennas—part II: experimental prototype. J Lightw Technol 2010; 28: 19–31.Yu NF, Capasso F . Flat optics with designer metasurfaces. Nat Mater 2014; 13: 139–150.Condrat C, Kalla P, Blair S . 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Multimode interference devices for focusing in microfluidic channels. Opt Lett 2011; 36: 3067–3069

Low-Power Operation in a Silicon Switch Based on an Asymmetric Mach Zehnder Interferometer

[EN] Mach Zehnder interferometer (MZI) structures are widely used as optical switches in photonic integrated circuits. However, power consumption is still the key parameter to make such devices practical in the silicon platform, particularly for those based on the thermo-optic effect. A new approach to significantly decrease the power consumption of a silicon switch based on an asymmetric MZI, together with an optimum selection of the operation wavelengths, is proposed. A power consumption reduction up to 50% is experimentally demonstrated in agreement with simulation results.This work was supported by TEC2012-38540 LEOMIS and NANOMET PLUS-Conselleria d'Educacio, Cultura i EsportPROMETEOII/2014/034. The work of L. Sanchez was supported by Generalitat Valenciana in the context of the VALi+d program.Sánchez Diana, LD.; Griol Barres, A.; Lechago Buendía, S.; Brimont, ACJ.; Sanchis Kilders, P. (2015). Low-Power Operation in a Silicon Switch Based on an Asymmetric Mach Zehnder Interferometer. IEEE Photonics Journal. 7(2):1-8. https://doi.org/10.1109/JPHOT.2015.2407317S187

Optical switching in hybrid VO2/Si waveguides thermally triggered by lateral microheaters

© 2018 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited"[EN] The performance of optical devices relying in vanadium dioxide (VO2) technology compatible with the silicon platform depends on the polarization of light and VO2 properties. In this work, optical switching in hybrid VO2/Si waveguides thermally triggered by lateral microheaters is achieved with insertion losses below 1 dB and extinction ratios above 20 dB in a broad bandwidth larger than 30 nm. The optical switching response has been optimized for TE and TM polarizations by using a homogeneous and a granular VO2 layer, respectively, with a small impact on the electrical power consumption. The stability and reversibility between switching states showing the possibility of bistable performance is also demonstrated. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.Funding from project TEC2016-76849 (MINECO/FEDER, UE) is acknowledged. The SOI samples were fabricated at IHP (we acknowledge Lars Zimmermann) in the framework of FP7-ICT-2013-11-619456 SITOGA project. Irene Olivares and Roberto Larrea also acknowledge respectively the Universitat Politecnica de Valencia and the Ecuadorian Government for funding their grant. P.H. acknowledges support from Becas Chile-CONICYT.Olivares-Sánchez-Mellado, I.; Sánchez Diana, LD.; Parra Gómez, J.; Larrea-Luzuriaga, RA.; Griol Barres, A.; Menghini, M.; Homm, P.... (2018). Optical switching in hybrid VO2/Si waveguides thermally triggered by lateral microheaters. Optics Express. 26(10):12387-12395. https://doi.org/10.1364/OE.26.012387S12387123952610Sorger, V. J., Lanzillotti-Kimura, N. D., Ma, R.-M., & Zhang, X. (2012). Ultra-compact silicon nanophotonic modulator with broadband response. Nanophotonics, 1(1), 17-22. doi:10.1515/nanoph-2012-0009Liang, H., Soref, R., Mu, J., Majumdar, A., Li, X., & Huang, W.-P. (2015). Simulations of Silicon-on-Insulator Channel-Waveguide Electrooptical 2 × 2 Switches and 1 × 1 Modulators Using a ${\bf Ge_2}{\bf Sb_2}{\bf Te_5}$ Self-Holding Layer. Journal of Lightwave Technology, 33(9), 1805-1813. doi:10.1109/jlt.2015.2393293Seo, G., Kim, B.-J., Ko, C., Cui, Y., Lee, Y. W., Shin, J.-H., … Kim, H.-T. (2011). Voltage-Pulse-Induced Switching Dynamics in $\hbox{VO}_{2}$ Thin-Film Devices on Silicon. IEEE Electron Device Letters, 32(11), 1582-1584. doi:10.1109/led.2011.2163922Yang, Z., Ko, C., & Ramanathan, S. (2011). Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions. Annual Review of Materials Research, 41(1), 337-367. doi:10.1146/annurev-matsci-062910-100347Vitale, W. A., Casu, E. A., Biswas, A., Rosca, T., Alper, C., Krammer, A., … Ionescu, A. M. (2017). A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor. Scientific Reports, 7(1). doi:10.1038/s41598-017-00359-6Zimmers, A., Aigouy, L., Mortier, M., Sharoni, A., Wang, S., West, K. G., … Schuller, I. K. (2013). Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition inVO2. Physical Review Letters, 110(5). doi:10.1103/physrevlett.110.056601Kats, M. A., Blanchard, R., Genevet, P., Yang, Z., Qazilbash, M. M., Basov, D. N., … Capasso, F. (2013). Thermal tuning of mid-infrared plasmonic antenna arrays using a phase change material. Optics Letters, 38(3), 368. doi:10.1364/ol.38.000368Chae, B.-G., Kim, H.-T., Youn, D.-H., & Kang, K.-Y. (2005). Abrupt metal–insulator transition observed in VO2 thin films induced by a switching voltage pulse. Physica B: Condensed Matter, 369(1-4), 76-80. doi:10.1016/j.physb.2005.07.032Ruzmetov, D., Gopalakrishnan, G., Deng, J., Narayanamurti, V., & Ramanathan, S. (2009). Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions. Journal of Applied Physics, 106(8), 083702. doi:10.1063/1.3245338Joushaghani, A., Jeong, J., Paradis, S., Alain, D., Stewart Aitchison, J., & Poon, J. K. S. (2014). Voltage-controlled switching and thermal effects in VO2 nano-gap junctions. Applied Physics Letters, 104(22), 221904. doi:10.1063/1.4881155Markov, P., Marvel, R. E., Conley, H. J., Miller, K. J., Haglund, R. F., & Weiss, S. M. (2015). Optically Monitored Electrical Switching in VO2. ACS Photonics, 2(8), 1175-1182. doi:10.1021/acsphotonics.5b00244Yang, Z., Hart, S., Ko, C., Yacoby, A., & Ramanathan, S. (2011). Studies on electric triggering of the metal-insulator transition in VO2thin films between 77 K and 300 K. Journal of Applied Physics, 110(3), 033725. doi:10.1063/1.3619806Yoon, J., Lee, G., Park, C., Mun, B. S., & Ju, H. (2014). Investigation of length-dependent characteristics of the voltage-induced metal insulator transition in VO2 film devices. Applied Physics Letters, 105(8), 083503. doi:10.1063/1.4893783Sánchez, L., Rosa, A., Griol, A., Gutierrez, A., Homm, P., Van Bilzen, B., … Sanchis, P. (2017). Impact of the external resistance on the switching power consumption in VO2 nano gap junctions. Applied Physics Letters, 111(3), 031904. doi:10.1063/1.4994326Ryckman, J. D., Diez-Blanco, V., Nag, J., Marvel, R. E., Choi, B. K., Haglund, R. F., & Weiss, S. M. (2012). Photothermal optical modulation of ultra-compact hybrid Si-VO_2 ring resonators. Optics Express, 20(12), 13215. doi:10.1364/oe.20.013215Ryckman, J. D., Hallman, K. A., Marvel, R. E., Haglund, R. F., & Weiss, S. M. (2013). Ultra-compact silicon photonic devices reconfigured by an optically induced semiconductor-to-metal transition. Optics Express, 21(9), 10753. doi:10.1364/oe.21.010753Abreu, E., Gilbert Corder, S. N., Yun, S. J., Wang, S., Ramírez, J. G., West, K., … Averitt, R. D. (2017). Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films. Physical Review B, 96(9). doi:10.1103/physrevb.96.094309Sánchez, L., Lechago, S., & Sanchis, P. (2015). Ultra-compact TE and TM pass polarizers based on vanadium dioxide on silicon. Optics Letters, 40(7), 1452. doi:10.1364/ol.40.001452Joushaghani, A., Jeong, J., Paradis, S., Alain, D., Stewart Aitchison, J., & Poon, J. K. S. (2015). Wavelength-size hybrid Si-VO_2 waveguide electroabsorption optical switches and photodetectors. Optics Express, 23(3), 3657. doi:10.1364/oe.23.003657Diana, L. D. S., Juan, F. C., Escutia, A. R., & Kilders, P. S. (2017). Ultra-compact electro-absorption VO2–Si modulator with TM to TE conversion. 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Clinical and immunological study of tofacitinib and baricitinib in refractory blau syndrome: case report and literature review

Blau syndrome (BS) is an autoinflammatory disorder characterized by non-caseating granulomatous dermatitis, arthritis, and uveitis. We present a case of refractory and severe BS that was treated with the Janus kinase inhibitors (JAKINIBS), Tofacitinib (TOFA) and then Baricitinib (BARI). Our aim was to describe the clinical and immunological outcomes after treatment with JAKINIBS. Blood tests and serum samples were obtained during follow-up with TOFA and BARI. We assessed their effects on clinical outcomes, acute phase reactants, absolute lymphocyte counts (ALCs), lymphocyte subset counts, immunoglobulins, and cytokine levels. A review of the literature on the use of JAKINIBS for the treatment of uveitis and sarcoidosis was also conducted. TOFA led to a rapid and maintained disease control and a steroid-sparing effect. A decrease from baseline was observed in ALC, CD3+, CD4+, CD8+, and natural killer (NK) cell counts. B-cells were stable. Serum levels of interleukin (IL)-4 and tumor necrosis factor alpha (TNF-?) increased, whereas IL-2, IL-6, IL-10, and IL-17 maintained stable. TOFA was discontinued after 19 months due to significant lymphopenia. The initiation of BARI allowed maintaining adequate control of disease activity with an adequate safety profile. The literature review showed seven patients with uveitis and five with sarcoidosis treated with JAKINIBS. No cases of BS treated with JAKINIBS were found. We report the successful use of JAKINIBS in a patient with refractory and severe BS.Funding: The authors disclosed receipt of the following financial support for the research, authorship, and/or publication of this article: This work was partially supported by Redes Temáticas de Investigación Cooperativa en Salud (RETICS) Program, RD16/0012 Red de Investigación en Inflamación y Enfermedades Reumáticas (RIER) from ISCIII from "Instituto de Salud Carlos III" (ISCIII) (Spain)